CSD16321Q5 n-channel ciclon nexfet ? power mosfets ? 2008 ciclon semiconductor device corp., rev 2.0 www.ciclonsemi.com all rights reserved. confidential and prop rietary information. do not distribute. type package package media qty ship CSD16321Q5 qfn 5x6 plastic package 13 inch reel 2500 tape and reel v ds 25 v q g 14 nc q g d 2.5 nc r ds(on) v gs = 3.0v 2.8 m ? v gs = 4.5v 2.1 m ? v gs = 8.0v 1.9 m ? v th 1.1 v maximum values ( t a = 25 o c unless otherwise stated) symbol parameter value units v ds drain to source voltage 25 v v gs gate to source voltage +10 / -6 v i d continuous drain current, t c = 25c 100 a continuous drain current 1 31 a i dm pulsed drain current, t a = 25c 2 200 a p d power dissipation 1 3.1 w t j , t stg operating junction and storage temperature range -55 to 150 c e as avalanche energy, single pulse i d =66a, l = 0.1mh, r g = 25 218 mj 1. r ja = 39 0 c/w on 1in 2 cu (2 oz.) on 0.060 thick fr4 pcb. 2. see figure 10 features ? optimized for 5v gate drive ? ultra low qg & qgd ? low thermal resistance ? avalanche rated ? pb free terminal plating ? rohs compliant qfn 5mm x 6mm plastic package ordering information top view s s g d d d d s 5 6 7 8 4 3 2 1 g s s s d d d d d 5 6 7 8 4 3 2 1 g s s s d d d d d product summary r ds ( on ) vs. v gs gate charge 0 1 2 3 4 5 6 012345678910 v gs - gate to source voltage (v) r ds(on) - on resistance (m ? ) i d = 25a t c = 125oc t c = 25o c 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 qg - gate charge (nc) gate voltage (v) v ds = 12.5v i d = 25a
CSD16321Q5 n-channel ciclon nexfet ? power mosfets ? 2008 ciclon semiconductor device corp., rev 2.0 www.ciclonsemi.com all rights reserved. confidential and prop rietary information. do not distribute. symbol parameter test conditions min typ max units static characteristics bv dss drain to source voltage v gs = 0v, i d = 250a 25 ? ? v i dss drain to source leakage current v gs = 0v, v ds = 20v ? ? 1 a i gss gate to source leakage current v ds = 0v, v gs = 10v ? ? 100 na v gs(th) gate to source threshold voltage v ds = v gs, i d = 250a 0.9 1.1 1.4 v r ds(on) drain to source on resistance v gs = 3.0v, i d = 25a ? 2.8 3.5 m ?? v gs = 4.5v, i d = 25a ? 2.1 2.6 m ? v gs = 8.0v, i d = 25a ? 1.9 2.4 m ? g fs transconductance v ds = 12.5v , i d = 25a ? 150 ? s dynamic characteristics c iss input capacitance v gs = 0v, v ds = 12.5v f = 1mhz ? 2360 3100 pf c oss output capacitance ? 1700 2200 pf c rss reverse transfer capacitance ? 115 150 pf r g series gate resistance ? 1.2 ? ? q g gate charge total (4.5v) v ds = 12.5v, i d = 25a ? 14 19 nc q gd gate charge gate to drain ? 2.5 ? nc q gs gate charge gate to source ? 4.0 ? nc q g(th) gate charge at vth ? 2.1 ? nc q oss output charge v ds = 15v, v gs = 0v ? 36 ? nc t d(on) turn on delay time v ds = 12.5v v gs = 4.5v i d = 25a r g = 2.7 ?? ? 11 ? ns t r rise time ? 19 ? ns t d(off) turn off delay time ? 40 ? ns t f fall time ? 30 ? ns diode characteristics v sd diode forward voltage i s = 25a, v gs = 0v ? 0.8 1.0 v q rr reverse recovery charge v dd =13v, i f = 25a, di/dt = 300a/s ? 33 ? nc t rr reverse recovery time v dd =13v, i f = 25a, di/dt = 300a/s ? 32 ? ns electrical characteristics (t a = 25 o c unless otherwise stated)
CSD16321Q5 n-channel ciclon nexfet ? power mosfets ? 2008 ciclon semiconductor device corp., rev 2.0 www.ciclonsemi.com all rights reserved. confidential and prop rietary information. do not distribute. symbol parameter min typ max units thermal characteristics r jc thermal resistance junction to case 3 ? ? 1.1 c/w r ja thermal resistance junction to ambient 3,4 ? ? 50 c/w 3. r jc is determined with the device mounted on a 1in square 2 oz. cu pad on a 1.5x1.5 in .060in thick fr4 board. r jc is guaranteed by design while r ca is determined by the user?s board design. 4. device mounted on fr4 material with 1in 2 of 2 oz. cu. 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 puls e duration (s ) zth ja normalized thermal impedance duty cycle =t 1 /t 2 rth ja = 39 0 c/w (max cu) t j = p * zth ja * rth ja t 1 t 2 p 0.02 0.1 0.05 0.3 0.01 0.5 single pulse figure 1: transient thermal impedance thermal characteristics (t a = 25 o c unless otherwise stated) max r ja = 48 o c/w when mounted on 1in 2 of 2 oz. cu. max r ja = 115 o c/w when mounted on min pad area of 2 oz. cu.
CSD16321Q5 n-channel ciclon nexfet ? power mosfets ? 2008 ciclon semiconductor device corp., rev 2.0 www.ciclonsemi.com all rights reserved. confidential and prop rietary information. do not distribute. 0 10 20 30 40 50 60 70 80 00.511.522.53 v ds - drain to source voltage (v) drain current (a) v gs = 4.5v v gs = 3.0v v gs = 2.5v v gs = 2.0v v gs = 1.5v figure 2: saturation characteristics figure 3: transfer charact eristics 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 qg - gate charge (nc) gate voltage (v) v ds = 12.5v i d = 25a 0 1 2 3 4 5 6 0 5 10 15 20 25 v ds - drain to source voltage (v) capacitance (nf) v gs = 0v , f = 1mhz c iss = c gd +c gs c oss =c ds +c gd c rss = c gd figure 4: gate charge figure 5: capacitance 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -75 -25 25 75 125 175 t c - case temperature (c) v gs (th) - threshold voltage (v) i d = 250 a 0 1 2 3 4 5 6 012345678910 v gs - gate to source voltage (v) r ds(on) - on resistance (m ? ) i d = 25a t c = 125oc t c = 25o c figure 6: threshold voltage vs. temperature figure 7: on resist ance vs. gate voltage typical mosfet characteristics (t a = 25 o c unless otherwise stated) 0 10 20 30 40 50 60 70 80 1 1.25 1.5 1.75 2 2.25 2.5 v gs - gate to source voltage (v) drain current (a) t c = -55o c t c = 25oc t c = 125oc v ds = 5v
CSD16321Q5 n-channel ciclon nexfet ? power mosfets ? 2008 ciclon semiconductor device corp., rev 2.0 www.ciclonsemi.com all rights reserved. confidential and prop rietary information. do not distribute. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -75 -25 25 75 125 175 t c - case temperature (c) normalized on resistance i d = 25a v gs = 4.5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 v sd - source to drain voltage (v) i sd - source to drain current (a) t c = 125o c t c = 25o c figure 8: on resistance vs. temperature figure 9: typical diode forward voltage 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 v ds - drain voltage (v) i d - drain current (a) 10ms 100ms 1s 1ms dc single pulse r thja =39 0 c/w ( max cu) a rea limited by r ds(on) 1 10 100 1000 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 t av - tim e in avalanche (s) i (av) - peak avalanche current (a) t c = 25o c t c = 125oc figure 10: maximum safe operating area figure 11: single pulse unclamped inductive switching figure 12: maximum drain current vs. temperature typical mosfet characteristics (t a = 25 o c unless otherwise stated) 0 20 40 60 80 100 120 -50 -25 0 25 50 75 100 125 150 175 t c - case temperature ( o c) i d - drain current (a)
CSD16321Q5 n-channel ciclon nexfet ? power mosfets ? 2008 ciclon semiconductor device corp., rev 2.0 www.ciclonsemi.com all rights reserved. confidential and prop rietary information. do not distribute. q5 package dimensions dim millimeters inches min max min max a 0.950 1.050 0.037 0.039 b 0.360 0.460 0.014 0.018 c 0.150 0.250 0.006 0.010 c1 0.150 0.250 0.006 0.010 d1 4.900 5.100 0.193 0.201 d2 4.320 4.520 0.170 0.178 e 4.900 5.100 0.193 0.201 e1 5.900 6.100 0.232 0.240 e2 3.920 4.12 0.154 0.162 e 1.27 typ 0.050 l 0.510 0.710 0.020 0.028 0.00 - - - k 0.760 - 0.030 - f1 6.205 6.305 0.244 0.248 f2 4.460 4.560 0.176 0.180 f3 4.460 4.560 0.176 0.180 f4 0.650 0.700 0.026 0.028 f5 0.620 0.670 0.024 0.026 f6 0.630 0.680 0.025 0.027 f7 0.700 0.800 0.028 0.031 f8 0.650 0.700 0.026 0.028 f9 0.620 0.670 0.024 0.026 f10 4.900 5.000 0.193 0.197 f11 4.460 4.560 0.176 0.180
CSD16321Q5 n-channel ciclon nexfet ? power mosfets ? 2008 ciclon semiconductor device corp., rev 2.0 www.ciclonsemi.com all rights reserved. confidential and prop rietary information. do not distribute. q5 tape and reel information note: 1. 10 sprocket hole pitch cumulative tolerance +/-0.2 2. camber not to exceed 1mm in 100mm, noncumulative over 250mm 3. material:black static dissipative polystyrene 4. all dimensions are in mm (unless otherwise specified) 5. thickness: 0.30 +/-0.05mm package marking information 3rd line lllll= last 5 di g its of the wafer lot # 2nd line (date code) yy = last 2 digits of the year ww = 2-digit work week c = country of origin > philippines = p > taiwan = t > china = c location: 1st line csd = fixed characters nnnnn = product code pin 1 identifier csdnnnnn yywwc lllll 8 5 1 4 5 8 1 4
CSD16321Q5 n-channel ciclon nexfet ? power mosfets ? 2008 ciclon semiconductor device corp., rev 2.0 www.ciclonsemi.com all rights reserved. confidential and prop rietary information. do not distribute. disclaimer ciclon semiconductor device corp. (? ciclon ?) reserves the right to make corrections, m odifications, enhancements, improvements and other changes to its products and services at any time and to discontinue any product or serv ice without notice. customers should ob tain the latest relevant information before placing orders and should verify that such info rmation is current and complete. all products are sold subje ct to ciclon ?s terms and conditions of sale supplied at t he time of order acknowledgement. additional information for further information on technology, delivery terms and conditions, or pricing pl ease contact your nearest ciclon semiconductor representative. ciclon semiconductor device corp. 116 research drive, bethlehem, pa 18015 t 610-849-5100 f 610-849-5101
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